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圖案化BaTiO3薄膜在Ge晶片上的單片集成

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發表于 2018-6-5 09:07:48 | 只看該作者 回帖獎勵 |倒序瀏覽 |閱讀模式
Monolithic integration of patterned BaTiO3 thin films on Ge wafers
圖案化BaTiO3薄膜在Ge晶片上的單片集成

Journal of Vacuum Science & Technology B 6, 1206 (2018);

https://doi.org/10.1116/1.5026109

Patrick Ponath and Agham Posadas
  Department of Physics, The University of Texas at Austin, Austin, Texas 78712Michael Schmidt,Anne-Marie Kelleher, Mary White, Dan O'Connell, Paul K. Hurley, and Ray Duffy
  Tyndall National Institute, University College Cork, Cork T12 R5CP, IrelandAlexander A. Demkova)
  Department of Physics, The University of Texas at Austin, Austin, Texas 78712
more...Hide Affiliations
a)Electronic mail: [email protected]

ABSTRACT
摘要

Titanates exhibit electronic properties highly desirable for field effect transistors such as very high permittivity and ferroelectricity. However, the difficulty of chemically etching titanates hinders their commercial use in device manufacturing. Here, the authors report the selective area in finestra growth of highly crystalline BaTiO3 (BTO) within photolithographically defined openings of a sacrificial SiO2 layer on a Ge (001) wafer by molecular beam epitaxy. After the BaTiO3 deposition, the sacrificial SiO2 can be etched away, revealing isolated nanoscale gate stacks circumventing the need to etch the titanate thin film. Reflection high-energy electron diffraction in conjunction with scanning electron microscopy is carried out to confirm the crystallinity of the samples. X-ray diffraction is performed to determine the out-of-plane lattice constant and crystal quality of the BTO film. Electrical measurements are performed on electrically isolated Pt/BaTiO3/SrTiO3/Ge capacitor devices.

        用于場效應晶體管時鈦酸鹽表現出非常可取的電子性質,例如非常高的介電常數和鐵電性。然而,化學蝕刻鈦酸鹽的困難妨礙了它們在器件制造中的商業應用。這里作者報道了通過分子束外延在Ge(001)晶片上的犧牲性SiO2層的光刻限定的開口內進行高結晶BaTiO3 (BTO)的精細生長的選擇性區域。在BaTiO3沉積之后,犧牲性SiO 2可被蝕刻掉,揭示了隔離的納米級柵極疊層,從而繞過了進行蝕刻鈦酸鹽薄膜的需要。使用反射高能電子衍射結合掃描電子顯微鏡來確定樣品的結晶度。使用X射線衍射來確定BTO膜的面外晶格常數和晶體質量。電氣測量是在電隔離的Pt/BaTiO3/SrTiO3/Ge電容器器件上進行的。


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