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量子點通信單光子發射器中光譜亮度變化的起源

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發表于 2019-1-16 12:45:15 | 只看該作者 回帖獎勵 |倒序瀏覽 |閱讀模式
Origin of spectral brightness variations in InAs/InP quantum dot telecom single photon emitters InAs / InP
量子點通信單光子發射器中光譜亮度變化的起源

Journal of Vacuum Science & Technology B 37, 011202 (2019);

https://doi.org/10.1116/1.5042540

Christopher J. K. Richardson1,a), Richard P. Leavitt1, Je-Hyung Kim2, Edo Waks2,3, Ilke Arslan4, and Bruce Arey4
Hide Affiliations
1Laboratory for Physical Sciences, University of Maryland, 8050 Greenmead Drive, College Park, Maryland 20740
2Department of Electrical and Computer Engineering, Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742
3Joint Quantum Institute, University of Maryland and the National Institute of Standards and Technology, College Park, Maryland 20742
4Fundamental and Computational Science Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352
a)Electronic mail: [email protected]

ABSTRACT
摘要

Long-distance quantum communication relies on the ability to efficiently generate and prepare single photons at telecom wavelengths. Low-density InAs quantum dots on InP surfaces are grown in a molecular beam epitaxy system using a modified Stranski–Krastanov growth paradigm. This material is a source of bright and indistinguishable single photons in the 1.3 μμm telecom band. Here, the exploration of the growth parameters is presented as a phase diagram, while low-temperature photoluminescence and atomic resolution images are presented to correlate structure and spectral performance. This work identifies specific stacking faults and V-shaped defects that are likely causes of the observed low brightness emission at 1.55 μμm telecom wavelengths. The different locations of the imaged defects suggest possible guidance for future development of InAs/InP single photon sources for c-band, 1.55 μμm wavelength telecommunication systems.

        長距離量子通信依賴于在通信波長上有效地生成和制備單光子的能力。使用改進的Stranski-Krastanov生長范式在分子束外延系統中在InP表面上生長低密度InAs量子點。這種材料是1.3 μμm通信頻段中明亮且難以區分的單光子的一種來源。這里,生長參數的研判以相圖表示,而低溫-光致發光和原子分辨率圖像則用于關聯結構和光譜性能。這項工作確定了特定的堆垛層錯和V-形缺陷,它們可能是在1.55 μμm電信波長下觀察到的低亮度發射的原因。成像缺陷的不同位置可能為未來開發c-波段,1.55 μμm波長通信系統下InAs / InP單光子源提供指導。


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